advanced power n-channel enhancement mode electronics corp. power mosfet low gate charge bv dss 12v capable of 2.5v gate drive r ds(on) 16m single drive requirement i d 33a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c thermal resistance junction-case max. 5 /w rthj-a thermal resistance junction-ambient max. 110 /w data and specifications subject to change without notice thermal data parameter 201026041 pulsed drain current 1 80 operating junction temperature range -55 to 150 linear derating factor 0.2 storage temperature range total power dissipation 25 -55 to 150 continuous drain current, v gs @ 4.5v 33 continuous drain current, v gs @ 4.5v 21 drain-source voltage 12 gate-source voltage 12 ap9t19gh/j parameter rating pb free plating product the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. g d s to-252(h) g d s to-251(j) g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 12 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.01 - v/ r ds(on) static drain-source on-resistance v gs =4.5v, i d =20a - - 16 m v gs =2.5v, i d =10a - - 24 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua - - 1.2 v g fs forward transconductance v ds =5v, i d =20a - 25 - s i dss drain-source leakage current (t j =25 o c) v ds =12v, v gs =0v - - 1 ua drain-source leakage current (t j =150 o c) v ds =10v ,v gs =0v - - 25 ua i gss gate-source leakage v gs =12v - - 100 na q g total gate charge 2 i d =20a - 18 28 nc q gs gate-source charge v ds =10v - 2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 9 - nc t d(on) turn-on delay time 2 v ds =10v - 12 - ns t r rise time i d =20a - 85 - ns t d(off) turn-off delay time r g =3.3 , v gs =5v - 24 - ns t f fall time r d =0.5 -90- ns c iss input capacitance v gs =0v - 905 1450 pf c oss output capacitance v ds =12v - 690 - pf c rss reverse transfer capacitance f=1.0mhz - 600 - pf r g gate resistance f=1.0mhz - 1.3 - source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =20a, v gs =0v - - 1.3 v notes: 1.pulse width limited by safe operating area. 2.pulse width < 300us , duty cycle < 2%. ap9t19gh/j
ap9t19gh/j fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 0 10 20 30 40 50 60 70 012345 v ds , drain-to-source voltage (v) i d , drain current (a) 5.0v 4.5v 3.5v 2.5v v g =1.5v t c =25 o c 0 10 20 30 40 50 60 70 012345 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 5.0v 4.5v 3.5v 2.5v v g =1.5v 12 16 20 24 12345 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =10a t c =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =20a v g =4.5v 0.0 0.5 1.0 1.5 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform ap9t19gh/j t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 0 2 4 6 8 10 12 14 0 10203040 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =20a v ds =6v v ds =8v v ds =10v 100 1000 10000 1591317 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz c iss c oss c rss 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s ingle pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
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